MT4S07_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF~UHF Band Low Noise Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT4S07
MT4S07
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low Noise Figure: NF = 1.5dB
(V_CE = 3 V, I_C = 5 mA, f = 2 GHz)
• High Gain: |S21e|² = 9.5dB
(V_CE = 3 V, I_C = 15 mA, f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
項
目
記号
定格
単位
Collector-base voltage
V_CBO
10
V
Collector-emitter voltage
V_CEO
5
V
Emitter-base voltage
V_EBO
1.5
V
Collector current
I_C
25
mA
Base current
I_B
10
mA
Collector power dissipation
P_C
150
mW
Junction temperature
Storage temperature range
Tj
125
°C
Tstg
−55~125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
TOSHIBA
―
2-3J1C
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.012 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
2
1
Type name
AD
3
4
1
2007-11-01