MT4S07U Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF~UHF Band Low Noise Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT4S07U
MT4S07U
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low Noise Figure: NF = 1.5dB
(V_CE = 3 V, I_C = 5 mA, f = 2 GHz)
• High Gain: |S21e|² = 10.5dB
(V_CE = 3 V, I_C = 15 mA, f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
Tj
Tstg
10
V
5
V
1.5
V
25
mA
10
mA
150
mW
125
°C
−55~125
°C
USQ
JEDEC
1. Emitter1(E1)
2.Base(B)
3.Emitter2(E2)
4.Collector(C)
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
TOSHIBA
2-2K1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.006 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
2
1
Type name
AD
3
4
1
2007-11-01