MT4S07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF~UHF Band Low Noise Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT4S07
MT4S07
VHF~UHF Band Low Noise Amplifier Applications
· Low Noise Figure: NF = 1.5dB
(VCE = 3 V, IC = 5 mA, f = 2 GHz)
· High Gain: |S21e|² = 9.5dB
(VCE = 3 V, IC = 15 mA, f = 2 GHz)
Maximum Ratings (Ta = 25°C)
項
目
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
記号
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
Tj
Tstg
Marking
2
1
Type name
定格
10
5
1.5
25
10
150
125
-55~125
単位
V
V
V
mA
mA
mW
°C
°C
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3J1C
Weight: 0.012 g (typ.)
AD
3
4
1
2002-01-23