MT4S06_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF~UHF Band Low Noise Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT4S06
MT4S06
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure: NF = 1.6dB (V_CE = 3 V, I_C = 3 mA, f = 2 GHz)
• High gain: |S_21e|² = 11.5dB (V_CE = 3 V, I_C = 7 mA, f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
10
V
5
V
1.5
V
15
mA
7
mA
60
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-3J1C
Weight: 0.012 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
f_T
⎪S_21e⎪² (1)
⎪S_21e⎪² (2)
NF (1)
NF (2)
V_CE = 3 V, I_C = 5 mA
V_CE = 1 V, I_C = 5 mA, f = 2 GHz
V_CE = 3 V, I_C = 7 mA, f = 2 GHz
V_CE = 1 V, I_C = 3 mA, f = 2 GHz
V_CE = 3 V, I_C = 3 mA, f = 2 GHz
Min Typ. Max Unit
7
10
⎯ GHz
⎯ 10.5 ⎯
dB
8.5 11.5 ⎯
⎯
1.7
3
dB
⎯
1.6
3
1
2007-11-01