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MT4S04A_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF~UHF Band Low Noise Amplifier Applications | |||
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Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT4S04A
MT4S04A
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
⢠Low noise figure: NF = 1.2dB (f = 1 GHz)
⢠High gain: Gain = 13.5dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
10
V
5
V
2
V
40
mA
10
mA
150
mW
125
°C
â55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
â
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
â
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-3J1C
Weight: 0.012 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling Precautionsâ/âDerating Concept and Methodsâ) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT (1)
fT (2)
âªS21eâª2 (1)
âªS21eâª2 (2)
NF (1)
NF (2)
VCE = 1 V, IC = 5 mA
VCE = 3 V, IC = 7 mA
VCE = 1 V, IC = 5 mA, f = 1 GHz
VCE = 3 V, IC = 20 mA, f = 1 GHz
VCE = 1 V, IC = 5 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
Min Typ. Max Unit
2
4.5
â¯
GHz
5
7
â¯
8
10
â¯
dB
11.5 13.5 â¯
â¯
1.3
2.2
dB
â¯
1.2
2
1
2007-11-01
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