MT3S41FS_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – UHF Low-Noise Amplifier Application

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S41FS
MT3S41FS
VCO Oscillator Stage
UHF Low-Noise Amplifier Application
FEATURES
• Low-Noise Figure: NF = 1.2 dB (@f= 2 GHz)
• High Gain: |S21e|² = 10.0 dB (@ f = 2 GHz)
Marking
2
3 ₂₆
1
Unit: mm
1.0±0.05
0.8±0.05
1
0.1±0.05 ²
3
0.1±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-current
Base-current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_CBO
8
V
V_CEO
4.5
V
V_EBO
1.5
V
I_C
80
mA
I_B
40
mA
P_C (Note 1)
100
mW
T_j
150
°C
T_stg
−55~150
°C
1.BASE
2.EMITTER
3.COLLECTOR
fSM
JEDEC
-
JEITA
-
TOSHIBA
2-1E1A
Weight: 0.0006 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device mounted on a glass-epoxy PCB (1.0 cm² x 0.8 mm (t))
1
2007-11-01