MT3S41FS Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION

MT3S41FS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
MT3S41FS
VCO OSCILLETOR STAGE
UHF LOW NOISE AMPLIFIER APPLICATION
FEATURES
· Low Noise Figure :NF=1.2dB (@f=2GHz)
· High Gain:|S21e|²=10.0dB (@f=2GHz)
Marking
Unit:mm
1.0±0.05
0.8±0.05
1
0.1±0.05 ²
3
0.1±0.05
2
3 ₂₆
1
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Current
Base-Current
Collector Power dissipation
Junction temperature
Storage temperature Range
Symbol
Rating
Unit
V_CBO
8
V
V_CEO
4.5
V
V_EBO
1.5
V
I_C
80
mA
I_B
40
mA
P_C(Note)
100
mW
T_j
150
°C
T_stg
−55~150
°C
Note: Device mounted on a glass-epoxy PCB(0.88 cm² ×0.7 mm (t))
1.BASE
2.EMITTER
3.COLLECTOR
fSM
JEDEC
JEITA
TOSHIBA
Weight: 0.0006 g
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-
2-1E1A
1
2003-02-14