MT3S38T Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
MT3S38T
MT3S38T
VCO OSCILLETOR STAGE
UHF LOW NOISE AMPLIFIER APPLICATION
Unit: mm
FEATURES
· Low Noise Figure :NF=1.2dB (@f=2GHz)
· High Gain:|S21e|²=11dB (@f=2GHz)
Marking
3
Q5
1
2
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Current
Base-Current
Collector Power dissipation
Junction temperature
Storage temperature Range
Symbol
Rating
Unit
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
8
V
4.5
V
1.5
V
50
mA
25
mA
100
mW
150
°C
−55~150
°C
TESM
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight:0.0022g (typ.)
1
2002-08-19