MT3S35T_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – UHF LOW NOISE AMPLIFIER APPLICATION

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
MT3S35T
MT3S35T
VCO OSCILLETOR STAGE
UHF LOW NOISE AMPLIFIER APPLICATION
Unit: mm
FEATURES
• Low Noise Figure :NF=1.4dB (@f=2GHz)
• High Gain:|S21e|²=13.0dB (@f=2GHz)
Marking
3
Q2
1
2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Current
Base-Current
Collector Power dissipation
Junction temperature
Storage temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
8
V
4.5
V
1.5
V
24
mA
12
mA
100
mW
150
°C
−55~150
°C
TESM
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight:0.0022g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01