MT3S21P Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – VHF-UHF Low-Noise, Low-Distortion Amplifier Application

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S21P
VHF-UHF Low-Noise, Low-Distortion Amplifier Application
FEATURES
• Low-Noise Figure: NF=1.55 dB (typ.) (@f=1 GHz)
• High Gain: |S_21e|²=11 dB (typ.) (@f=1 GHz)
Marking
MT3S21P
Unit: mm
T2
Absolute Maximum Ratings (Ta = 25°C)
PW-Mini
JEDEC
-
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (Typ.)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-current
Base-current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
12
V
V_CEO
6
V
V_EBO
2
V
I_C
80
mA
I_B
10
mA
P_C
400
mW
P_{C(Note 1)}
1.8
W
T_j
150
°C
T_stg
−55 to 150
°C
Note 1: The device is mounted on a ceramic board (25mm x 25mm x 0.8 mm (t))
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-03-31