MT3S19TU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – VHF-UHF Low-Noise, Low-Distortion Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S19TU
MT3S19TU
VHF-UHF Low-Noise, Low-Distortion Amplifier Applications
Features
• Low-Noise Figure : NF = 1.5 dB (typ.) (@ f = 1 GHz)
• High Gain : |S_21e|²=13 dB (typ.) (@ f = 1 GHz)
2.1±0.1
1.7±0.1
Unit: mm
1
2
3
Marking
3
T6
1.BASE
2.EMITTER
3.COLLECTOR
1
2
Absolute Maximum Ratings (Ta = 25°C)
UFM
JEDEC
-
JEITA
-
TOSHIBA
2-2U1B
Weight: 6.6 mg (typ.)
Characteristics
Symbol
Rating
Unit
Collector-basevoltage
Collector-emitter voltage
Emitter-base voltage
Collector-current
Base-current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
12
V
V_CEO
6
V
V_EBO
2
V
I_C
80
mA
I_B
10
mA
P_{C(Note 1)}
900
mW
T_j
150
°C
T_stg
−55 to 150
°C
Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t))
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-03-31