MT3S19R Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S19R
MT3S19R
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications
FEATURES
• Low Noise Figure:NF=1.5dB(Typ.) (@ f=1GHz)
• High Gain:|S21e|²=13dB(Typ.) (@ f=1GHz)
Marking
3
0.05　M A
0.42^+-00..0058
3
Unit: mm
+0.08
0.17 _-0.07
1
0.95
2
0.95
2.9±0.2
A
T6
1
2
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-current
Base-current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_CBO
12
V
V_CEO
6
V
V_EBO
2
V
I_C
80
mA
I_B
10
mA
P_C(Note1)
320
mW
T_j
150
°C
T_stg
−55 to 150
°C
SOT23F
JEDEC
－
JEITA
－
TOSHIBA
－
Weight: 11 mg (typ.)
Note 1: The device is mounted on a FR4 board (20 mm x 25 mm x 1.55 mm (t))
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-08-18