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MT3S16U Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF~UHF Band Oscillator and Amplifier Applications | |||
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S16U
VHF~UHF Band Oscillator and Amplifier Applications
⢠fT is high and current dependability is excellent.
⢠The Cre curve is flat.
:|S21e|2 = 4.5 dB (@ 2 V, 5 mA, 1 GHz)
: NF = 2.4 dB (@ 2 V, 10 mA, f = 1 GH)
MT3S16U
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
5
V
Emitter-base voltage
VEBO
2
V
Collector current
Base current
Collector power dissipation
IC
60
mA
IB
10
mW
PC
100
mW
USM
1.Base
2.Emitter
3.Collector
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
â55~125
°C
JEDEC
â
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
TOSHIBA
â
2-2E1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.006g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
3
T4
1
2
1
2007-11-01
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