MT3S16T Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF~UHF Band Oscillator and Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S16T
VHF~UHF Band Oscillator and Amplifier Applications
• f_T is high and current dependability is excellent.
• The Cre curve is flat.
:|S_21e|² = 4.5 dB (@ 2 V, 10 mA, 1 GHz)
:NF = 2.4 dB (@ 2 V, 10 mA, 1 GHz)
MT3S16T
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V_CBO
10
V
Collector-emitter voltage
V_CEO
5
V
Emitter-base voltage
V_EBO
2
V
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
I_C
60
mA
I_B
10
mW
P_C
100
mW
T_j
125
°C
T_stg
−55~125
°C
TESM
JEDEC
1.Base
2.Emitter
3.Collector
―
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEITA
TOSHIBA
―
2-1B1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.0022g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
3
T4
1
2
1
2007-11-01