MT3S11T Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF~UHF Band Low-Noise Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S11T
VHF~UHF Band Low-Noise Amplifier Applications
VHF~UHF Band Oscillator Applications
• Superior performance in oscillator applications.
• Superior noise characteristics
: NF = 2.4 dB, |S21e|² = 3.5 dB (f = 2 GHz)
MT3S11T
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector- base voltage
Collector- emitter voltage
Emitter- base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
13
V
6
V
1
V
40
mA
10
mW
100
mW
125
°C
−55~125
°C
TESM
1.Base
2.Emitter
3.Collector
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight: 0.0022g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
3
TR
1
2
1
2007-11-01