MT3S11FS Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF~UHF Band Low-Noise Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S11FS
VHF~UHF Band Low-Noise Amplifier Applications
VHF~UHF Band Oscillator Applications
MT3S11FS
Unit: mm
• Superior performance in oscillator applications.
• Superior noise characteristics
:NF = 2.4 dB, |S_21e|² = 3.5 dB (f =2GHz)
1
3
2 0.8±0.05
1.0±0.05
0.1±0.05
Absolute Maximum Ratings (Ta = 25°C)
0.1±0.05
Characteristic
Collector- base voltage
Collector- emitter voltage
Emitter- base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_CBO
13
V
V_CEO
6
V
V_EBO
1
V
I_C
40
mA
I_B
10
mW
P_C(Note)
85
mW
T_j
125
°C
T_stg
−55~125
°C
1.Base
fSM
2.Emitter
3.Collector
JEDEC
―
JEITA
―
TOSHIBA
2-1E1A
Weight: 0.0006g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: 10 mm² × 1.0 mm (t), mounted on a glass-epoxy printed circuit board.
Marking
2
3
08
1
1
2007-11-01