MT3S111P Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – VHF-UHF Low-Noise, Low-Distortion Amplifier Applications

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S111P
MT3S111P
VHF-UHF Low-Noise, Low-Distortion Amplifier Applications
Features
• Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz)
• High Gain: |S_21e|²=10.5 dB (typ.) (@f=1 GHz)
Unit: mm
Marking
R5
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
PW-Mini
JEDEC
⎯
JEITA
SC-62
TOSHIBA
2-5K1A
Weight:0.05 g (typ.)
Collector-emitter voltage
V_CES
13
V
Collector-emitter voltage
V_CEO
6
V
Emitter-base voltage
V_EBO
0.6
V
Collector-current
I_C
100
mA
Base-current
I_B
10
mA
Collector power dissipation
P_C
300
mW
Collector power dissipation
P_C(Note 1)
1
W
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55 to 150
°C
Note 1: The device is mounted on a ceramic board (16 mm×16 mm×0.8 mm (t))
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-03-31