MT3S111 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – VHF-UHF Low-Noise, Low-Distortion Amplifier Applications

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S111
VHF-UHF Low-Noise, Low-Distortion Amplifier Applications
Features
• Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz)
• High Gain:|S_21e|²=12 dB (typ.) (@ f=1 GHz)
MT3S111
Unit: mm
Marking
R5
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector-current
Base-current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_CES
13
V
V_CEO
6
V
V_EBO
0.6
V
I_C
100
mA
I_B
10
mA
P_C
160
mW
P_{C (Note 1)}
700
mW
T_j
150
°C
T_stg
−55 to 150
°C
S-Mini
JEDEC
TO-236
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t))
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-03-30