MT3S108FS Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF-SHF Low Noise Amplifier Application

MT3S108FS
TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE
MT3S108FS
VCO OSCILLETOR STAGE
VHF-SHF Low Noise Amplifier Application
FEATURES
• Low Noise Figure :NF=0.9dB (@f=2GHz)
• High Gain:|S21e|²=11.5dB (@f=2GHz)
Marking
2
3 ₄₃
1
Unit:mm
1.0±0.05
0.8±0.05
1
3
0.1±0.05 ² 0.1±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Current
Base-Current
Collector Power dissipation
Junction temperature
Storage temperature Range
Symbol
Rating
Unit
V_CBO
10
V
V_CEO
4.5
V
V_EBO
1.5
V
I_C
25
mA
I_B
12.5
mA
P_C(Note 1)
100
mW
T_j
150
°C
T_stg
−55~150
°C
1.BASE
2.EM IT TER
3.COLLECTOR
fSM
JEDEC
JEITA
TOSHIBA
Weight: 0.0006 g
-
-
2-1E1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device mounted on a glass-epoxy PCB(1.0 cm² x 1.0 mm (t))
1
2007-11-01