MT3S07T_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – VHF~UHF Band Low Noise Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S07T
MT3S07T
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure: NF = 1.5dB (V_CE = 3 V, I_C = 5 mA, f = 2 GHz)
• High gain: |S_21e|² = 9.5dB (V_CE = 3 V, I_C = 15 mA, f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
10
V
5
V
1.5
V
25
mA
10
mA
100
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight: 0.0022 g (typ.)
1
2007-11-01