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MT3S06S_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF~UHF Band Low Noise Amplifier Applications
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S06S
MT3S06S
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure: NF = 1.6dB (VCE = 3 V, IC = 3 mA, f = 2 GHz)
• High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
10
V
5
V
1.5
V
15
mA
7
mA
60
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2H1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.0024 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
⎪S21e⎪2 (1)
⎪S21e⎪2 (2)
NF (1)
NF (2)
VCE = 3 V, IC = 5 mA
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 3 V, IC = 7 mA, f = 2 GHz
VCE = 1 V, IC = 3 mA, f = 2 GHz
VCE = 3 V, IC = 3 mA, f = 2 GHz
1
Min Typ. Max Unit
7
10
⎯
8.5
6.5 9.5
⎯
1.7
⎯
1.6
⎯ GHz
⎯
dB
⎯
3
dB
3
2007-11-01