MT3S06FS Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF~UHF Band Low-Noise Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S06FS
VHF~UHF Band Low-Noise Amplifier Applications
VHF~UHF Band Buffer Applications
MT3S06FS
Unit: mm
• Superior performance in buffer applications
• Superior noise characteristics
: NF = 1.7 dB, |S21e|² = 8.5 dB (f = 2 GHz)
1
3
2 0.8±0.05
1.0±0.05
0.1±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_CBO
10
V
V_CEO
5
V
V_EBO
1.5
V
I_C
15
mA
I_B
7
mW
P_C(Note)
85
mW
T_j
125
°C
T_stg
−55~125
°C
0.1±0.05
1.BASE
2.EMITTER
fSM
3.COLLECOTR
JEDEC
―
JEITA
―
Toshiba
2-1E1A
Weight: 0.0006 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: 10mm² ×0.8 mm(t), mounted on a glass-epoxy printed circuit board.
Marking
2
3 ₀₃
1
1
2007-11-01