MT3S05T Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S05T
MT3S05T
VHF~UHF Band Low Noise Amplifier Applications
· Sutable for use in an OSC
· Low noise figure
NF = 1.4dB
· Excellent collector current linearity
|S21e|² = 8.5dB (@1 V/5 mA/1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
Tj
Tstg
Rating
Unit
10
V
5
V
2
V
40
mA
10
mA
100
mW
125
°C
-55~125
°C
Marking
3
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight: g (typ.)
TK
1
2
1
2002-01-23