MT3S04AFS Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF~UHF Band Low-Noise Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S04AFS
VHF~UHF Band Low-Noise Amplifier Applications
VHF~UHF Band Oscillator Applications
MT3S04AFS
Unit: mm
• Superior performance in oscillator applications
• Superior noise characteristics
: NF = 1.3 dB, |S21e|² = 9.5 dB (f = 1 GHz)
1
3
2 0.8±0.05
1.0±0.05
0.1±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector- base voltage
Collector- emitter voltage
Emitter- base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_CBO
10
V
V_CEO
5
V
V_EBO
2
V
I_C
40
mA
I_B
10
mW
P_C(Note 1)
85
mW
T_j
125
°C
T_stg
−55~125
°C
0.1±0.05
1.Base
fSM
2.Emitter
3.Collector
JEDEC
―
JEITA
―
Toshiba
2-1E1A
Weight: 0.0006 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note 1: 10 mm² × 1.0 mm (t), mounted on a glass-epoxy printed circuit board.
Marking
2
3 ₀₁
1
1
2007-11-01