MIG75J101H Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Silicon N Channel IGBT

MIG75J101H
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG75J101H
High Power Switching Applications
Motor Control Applications
l Integrates inverter & control circuits (igbt drive units, protection units for over-current, under-voltage &
over-temperature) in one package.
l The electrodes are isolated from case.
l High speed type IGBT
: VCE (sat) = 2.5 V (Max.)
t_off = 3.0 µs (Max.)
trr = 0.30 µs (Max.)
l Outline
: TOSHIBA 2-110A1A
l Weight
: 520 g
Equivalent Circuit
1
2001-05-11