MIG50Q201H Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – High Power Switching Applications

MIG50Q201H
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG50Q201H
High Power Switching Applications
Motor Control Applications
l Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units
for over−current, realtime-current-control (RTC), under−voltage & over-temperature) in one
package.
l The electrodes are isolated from case.
l High speed type IGBT
: VCE (sat) = 3.5 V (Max.)
toff = 2.6 µs (Max.)
trr = 0.21 µs (Max.)
l Outline
: 2−110A1A
l Weight
: 520 g
Equivalent Circuit
1
2001-05-29