MIG50J101H Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – TOSHIBA Intelligent Power Module Silicon N Channel IGBT

MIG50J101H
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG50J101H
High Power Switching Applications
Motor Control Applications
l Integrates inverter & control circuits (IGBT drive units, protection units for over-current, under-voltage &
over-temperature) in one package.
l The electrodes are isolated from case.
l High speed type IGBT : VCE (sat) = 2.5 V (max)
toff = 3.0 µs (max)
trr = 0.30 µs (max)
l Package dimensions : TOSHIBA 2-110A1A
l Weight : 520 g
Equivalent Circuit
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2002-10-31