MIG100J101H Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – TOSHIBA Intelligent Power Module Silicon N Channel IGBT

MIG100J101H
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG100J101H
High Power Switching Applications
Motor Control Applications
l Integrates inverter & control circuits (IGBT drive units, protection units for over-current, under-voltage &
over-temperature) in one package.
l The electrodes are isolated from case.
l High speed type IGBT : VCE (sat) = 2.5 V (Max.)
toff = 3.0 µs (Max.)
trr = 0.30 µs (Max.)
l Outline : TOSHIBA 2-110A1A
l Weight : 520 g
Equivalent Circuit
1. GND (U)
7. GND (W)
13. IN (X)
2. IN (U)
8. IN (W)
14. IN (Y)
3. VD (U)
9. VD (W)
15. IN (Z)
4. GND (V)
10. GND (L)
16. FO
5. IN (V)
11. VD (L)
6. VD (V)
12. OPEN
1
2001-05-29