MG800J2YS50A Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA IGBT Module Silicon N Channel IGBT

MG800J2YS50A
TOSHIBA IGBT Module Silicon N Channel IGBT
MG800J2YS50A
High power switching applications
Motor control applications
Unit: mm
· The electrodes are isolated from case.
· Enhancement-mode
· Thermal output terminal (TH)
Equivalent Circuit
TH1
ï¼£1
TH2
G1
Fo1
E1
E1/C2
JEDEC
JEITA
G2
Fo2
TOSHIBA
E2
Weight: 680 g (typ.)
E2
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
Forward current
DC
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
Terminal: M8
Mounting: M5
Symbol
V_CES
V_GES
I_C
I_F
P_C
T_j
T_stg
V_Isol
¾
¾
Rating
600
±20
800
800
2900
150
-40~125
2500
(AC 1 min)
10
3
Unit
V
V
A
A
W
°C
°C
V
Nï½¥m
Nï½¥m
―
―
2-126A1A
1
2002-10-31