MG75J2YS50 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

TOSHIBA GTR Module Silicon N Channel IGBT
MG75J2YS50
High Power Switching Applications
Motor Control Applications
l The electrodes are isolated from case.
l High input impedance.
l Includes a complete half bridge in one package.
l Enhancement-mode.
l High speed : tf = 0.30µs(Max) (IC = 75A)
trr = 0.15µs(Max) (IF = 75A)
l Low saturation voltage
: VCE (sat) = 2.70V (Max) (IC = 75A)
Equivalent Circuit
MG75J2YS50
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
DC
Collector current
1ms
DC
Forward current
1ms
Collector power dissipation (T_c = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
V_CES
V_GES
I_C
I_CP
I_F
I_FM
P_C
T_j
T_stg
V_Isol
―
JEDEC
EIAJ
TOSHIBA
Weight: 202g (Typ.)
Rating
Unit
600
V
±20
V
75
A
150
75
A
150
390
W
150
°C
−40 ~ 125
°C
2500
(AC 1 min.)
V
3/3
N·m
―
―
2-94D1A
000707EAA2
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2001-02-22 1/5