MG600Q1US61 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – TOSHIBA IGBT Module Silicon N Channel IGBT

TOSHIBA IGBT Module Silicon N Channel IGBT
MG600Q1US61
MG600Q1US61
High Power Switching Applications
Motor Control Applications
Unit: mm
· High input impedance
· High speed: tf = 0.3 µs (max)
Inductive load
· Low saturation voltage: VCE (sat) = 2.6 V (max)
· The electrodes are isolated from case.
· Enhancement-mode
Equivalent Circuit
C
G
E
E
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC (Tc = 80°C)
Forward current
DC (Tc = 80°C)
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
Terminal
Mounting
Symbol
V_CES
V_GES
I_C
I_F
P_C
T_j
T_stg
V_isol
¾
¾
JEDEC
JEITA
TOSHIBA
Weight: 465 g (typ.)
Rating
1200
±20
600
600
5400
150
-40 to 125
2500
(AC 1 minute)
3
3
Unit
V
V
A
A
W
°C
°C
Vrms
N·m
N·m
―
―
2-109F1A
1
2002-10-04