MG400Q1US65H Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High Power & High Speed Switching Applications

MG400Q1US65H
TOSHIBA IGBT Module Silicon N Channel IGBT
MG400Q1US65H
High Power & High Speed Switching
Applications
Unit: mm
• High input impedance
• Enhancement-mode
• The electrodes are isolated from case.
Equivalent Circuit
E
C
E
G (B)
Maximum Ratings (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
Weight: 465 g (typ.)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Forward current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
Terminal
Mounting
Symbol
V_CES
V_GES
I_C
I_CP
I_F
I_FM
P_C
T_j
T_stg
V_Isol
⎯
⎯
Rating
Unit
1200
V
±20
V
400
A
800
400
A
800
2650
W
150
°C
−40 to 125
°C
2500
(AC 1 minute)
V
3
N·m
3
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2-109F1A
1
2003-12-19