MG200J6ES60 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA GTR Module Silicon N Channel IGBT

MG200J6ES60
TOSHIBA GTR Module Silicon N Channel IGBT
MG200J6ES60(600V/200A 6in1)
High Power Switching Applications
Motor Control Applications
· Integrates inverter power circuit in to a single package.
· The electrodes are isolated from case.
· Low thermal resistance
· VCE (sat) = 1.6 V (typ.)
Equivalent Circuit
P
CN-1:7
CN-1:6
CN-1:4
CN-1:2
CN-1:8
CN-1:5
CN-1:3
CN-1:1
U
V
W
CN-2:3
CN-2:2
CN-2:1
CN-2:4
N
Signal Terminal
CN-1
1. E (W)
5. E (U)
CN-2
1. G (Z)
2. G (W)
6. G (U)
2. G (Y)
3. E (V)
7. TH1
3. G (X)
4. G (V)
8. TH2
4. E (L)
1
2002-01-24