MG150Q2YS65H Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High Power & High Speed Switching Applications

MG150Q2YS65H
TOSHIBA IGBT Module Silicon N Channel IGBT
MG150Q2YS65H
High Power & High Speed Switching
Applications
Unit: mm
· High input impedance
· Enhancement-mode
· The electrodes are isolated from case.
Equivalent Circuit
E1
E2
C1
E2
G1 E1/C2 G2
JEDEC
JEITA
TOSHIBA
Weight: 255 g (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
DC
Collector current
1ms
DC
Forward current
1ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
Terminal
Mounting
Symbol
V_CES
V_GES
I_C
I_CP
I_F
I_FM
P_C
T_j
T_stg
V_Isol
¾
¾
Rating
Unit
1200
V
±20
V
150
A
300
150
A
300
890
W
150
°C
-40 to 125
°C
2500
(AC 1 minute)
V
3
N▪m
3
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2-95A4A
1
2002-10-04