MG150J7KS50 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA GTR Module Silicon N Channel IGBT

TOSHIBA GTR Module Silicon N Channel IGBT
MG150J7KS50
MG150J7KS50
High Power Switching Applications
Motor Control Applications
l The electrodes are isolated from case.
l High input impedance
l 7 IGBTs built into 1 package.
l Enhancement-mode
l High speed type IGBT : Inverter stage
: VCE (sat) = 2.8V (max) (@IC = 150A)
: tf = 0.5µs (max) (@IC = 150A)
: trr = 0.3µs (max) (@IF = 150A)
l Outline
: TOSHIBA 2-110A1B
l Weight: 520g
Equivalent Circuit
1
2001-08-16