MG150J2YS50 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)

TOSHIBA GTR Module Silicon N Channel IGBT
MG150J2YS50
MG150J2YS50
High Power Switching Applications
Motor Control Applications
Unit: mm
l The electrodes are isolated from case
l High input impedance
l Includes a complete half bridge in one package
l Enhancement-mode
l High speed
: tf = 0.30µs (Max) (IC = 150A)
trr = 0.15µs (Max) (IF = 150A)
l Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 150A)
Equivalent Circuit
JEDEC
EIAJ
TOSHIBA
―
―
2-95A1A
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
DC
Collector current
1ms
DC
Forward current
1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
V_CES
V_GES
I_C
I_CP
I_F
I_FM
P_C
T_j
T_stg
V_Isol
―
Rating
Unit
600
V
±20
V
150
A
300
150
A
300
780
W
150
°C
−40 ~ 125
°C
2500
(AC 1 min.)
V
3/3
N·m
000707EAA2
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2001-02-22 1/5