MG150J1ZS50 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel IGBT

TOSHIBA GTR Module Silicon N Channel IGBT
MG150J1ZS50
High Power Switching Applications
Motor Control Applications
l The electrodes are isolated from case.
l High input impedance
l Includes a complete half bridge in one package.
l Enhancement-mode
l High speed : tf = 0.30µs (max) (IC = 150A)
trr = 0.15µs (max) (IF = 150A)
l Low saturation voltage
: VCE (sat) = 2.70V (max) (IC = 150A)
Equivalent Circuit
MG150J1ZS50
Unit: mm
JEDEC
JEITA
TOSHIBA
―
―
2-95A3A
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Reverse voltage
DC
Collector current
1ms
DC
Forward current
1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
V_CES
V_GES
V_R
I_C
I_CP
I_F
I_FM
P_C
T_j
T_stg
V_Isol
―
Rating
Unit
600
V
±20
V
600
V
150
A
300
150
A
300
780
W
150
°C
−40 ~ 125
°C
2500
(AC 1 min.)
V
3/3
N·m
1
2001-08-16