MG1200V1US51 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT

MG1200V1US51
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
MG1200V1US51
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
FEATURES
l High Input Impedance
l Enhancement Mode
l Electrodes are isolated from case.
EQUIVALENT CIRCUIT
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTICS
Collector−Emitter Voltage
Gate−Emitter Voltage
DC
Collector Current
1ms
DC
Forward Current
1ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
Isolation Voltage
Screw Torque
Terminal: M4/M8
Mounting
SYMBOL
V_CES
V_GES
I_C
I_CP
I_F
I_FM
P_C
T_j
T_stg
V_Isol
―
RATING
1700
20
1200
2400
1200
2400
5560
−20~125
−40~125
5400
(AC 1min)
2/7
4
UNIT
V
V
A
A
W
°C
°C
V
N·m
1
2001-06-26