MG1200FXF1US51 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA GTR Module Silicon N-Channel IGBT

MG1200FXF1US51
Preliminary ^{TOSHIBA GTR Module Silicon N-Channel IGBT}
MG1200FXF1US51
High Power Switching Applications
Motor Control Applications
· High input impedance
· Enhancement mode
· Electrodes are isolated from case.
Equivalent Circuit
C
CC
C
G
E
E
EE
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Peak 1 cycle surge current 10 ms (half sine)
Operating junction temperature
Storage temperature range
Isolation voltage
Terminal: M4/M8
Screw torque
Mounting
V_CES
V_GES
I_C
I_CP
I_FSM
T_j
T_stg
V_Isol
¾
3300
V
±20
V
1200
A
2400
A
10
kA
-40~125
°C
-40~125
°C
6000 (AC 1 min) V
2/7
Nm
4
Caution: MG1200FXF1US51 has no short-circuit capability.
1
2001-09-05