JDV4P08U_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – VCO for UHF Band Radio

TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV4P08U
VCO for UHF Band Radio
• High Capacitance Ratio : C_1V/C_4V = 3.0 (typ.)
• Low Series Resistance : r_s = 0.35 Ω (typ.)
• The device incorporates two diodes which have no common pins, and is
suitable for high-density mounting.
JDV4P08U
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_R
10
V
T_j
125
°C
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
1-2U1A
Weight: 0.006 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
Symbol
V_R
I_R
C_1V
C_4V
C_1V/C_4V
r_s
Test Condition
I_R = 1 μA
V_R = 10 V
V_R = 1 V, f = 1 MHz
V_R = 4 V, f = 1 MHz
⎯
V_R = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured: V_sig = 500 mVrms
Min Typ. Max Unit
10
⎯
⎯
V
⎯
⎯
3
nA
17.3 18.3 19.3
pF
5.3 6.1 6.6
2.8 3.0
⎯
⎯
⎯ 0.35 0.5
Ω
1
2007-11-01