JDV4P08U Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE

TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE
JDV4P08U
Small Package
Ultra Low Series Resistance : rs = 0.30 (Typ.)
2.1 0.1
1.25 0.1
MAXIMUM RATINGS(Ta = 25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
10
125
55 125
UNIT
V
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL
TEST CONDITION
Reverse Voltage
VR
IR = 1 A
Reverse Current
IR
VR = 10 V
Capacitance
C
VR = 1 V
f = 1 MHz
Capacitance
C
VR = 4 V
f = 1 MHz
Capacitance Ratio C C
Series Resistance
rs
VR = 1 V
f = 470 MHz
MIN. TYP. MAX. UNIT
10
V
3 nA
17.3 18.3 19.3 pF
5.3 6.1 6.6 pF
2.8 3.0
0.3 0.5
Marking