JDV3S27CT Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VCO for UHF Band Radio

TOSHIBA Diode Silicon Epitaxial Planar Type
JDV3S27CT
JDV3S27CT
VCO for UHF Band Radio
• High capacitance ratio: C_1V/C_4V = 2.9 (typ.)
• Low series resistance: r_s = 0.48 Ω (typ.)
• This device is suitable for use in small tuners.
• Lead (Pb)-free.
Maximum Ratings (Ta = 25°C)
Characteristic
Reverse voltage
Junction temperature
Storage temperature range
Symbol
V_R
T_j
T_stg
Rating
Unit
10
V
150
°C
−55 ~ 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
V_R
I_R
C_1V
C_4V
C_1V/C_4V
r_s
I_R = 1 µA
V_R = 5 V
V_R = 1 V, f = 1 MHz
V_R = 4 V, f = 1 MHz
⎯
V_R = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured. V_sig = 100 mVrms
Marking
0.6±0.05
0.5±0.03
Unit: mm
３
１
２
0.35
0.15±0.03
0.05±0.03
CST3
1.Anode
2.NC
3.Cathode
JEDEC
―
JEITA
―
TOSHIBA
1-1S1A
Weight: 0.00075 g (typ.)
Min Typ. Max Unit
10
⎯
⎯
V
⎯
⎯
1
nA
8.06 ⎯ 8.56
pF
2.79 ⎯ 2.98
2.79 ⎯ 2.98 ⎯
⎯ 0.48 0.63 Ω
2
3
62 1
1
2005-11-07