JDV3C34 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Electronic Tuning Applications for FM Receivers

TOSHIBA Diode Silicon Epitaxial Planar Type
JDV3C34
JDV3C34
○ Electronic Tuning Applications for FM Receivers
• High capacitance ratio: C_2V/C_6V = 2.6 (typ.)
• Low series resistance: r_s = 0.3 Ω (typ.)
• Two diodes in a single package
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
V_R
12
V
T_j
150
°C
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Unit: mm
S-Mini
1. Anode 1
2. Anode 2
3. Cathode
JEDEC
―
JEITA
SC-59
TOSHIBA
1-3G1F
Weight: 0.013 g (typ.)
1
2007-11-01