JDV2S71E Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – UHF SHF TUNING

TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S71E
JDV2S71E
UHF SHF TUNING
Unit: mm
• High capacitance ratio: C_{1 V}/C _25V = 11.5 (typ.)
• Low series resistance: r_s = 1.0 Ω (typ.)
• Excellent C-V characteristics,and small tracking error.
• Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Peak reverse voltage
Junction temperature
Storage temperature range
Symbol
V_R
V_RM
T_j
T_stg
Rating
Unit
30
V
35(R_L=10 kohm) V
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Symbol
Test Condition
V_R
I_R
C_{1 V}
C_{25 V}
C_{1 V}/C_{25 V}
r_s
I_R = 1 μA
V_R = 28 V
V_R = 1 V, f = 1 MHz
V_R = 25V, f = 1 MHz
⎯
V_R = 5 V, f = 470 MHz
Note1: Signal level when capacitance is measured: Vsig = 500 mVrms
Note2:Available in matched group for capacitance to 6%
C (max) − C (min) _{<= 0.06}
C (min)
Marking
(VR=1 ~ 25V)
Min Typ. Max Unit
30
⎯
⎯
V
⎯
⎯
10
nA
6
⎯
7.2
pF
0.49 ⎯ 0.64 pF
10 11.5 ⎯
⎯
⎯
1
1.5
Ω
FJ
1
2007-11-01