JDV2S41FS Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Variable Capacitance Diode

JDV2S41FS
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
JDV2S41FS
VCO for V/UHF Band Radio
• Low series resistance: r_s = 0.2 Ω (typ.)
• High capacitance ratio: C_{2 V} / C_{10 V} = 2.5 (typ.)
• Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
V_R
15
V
T_j
125
°C
T_stg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Unit: mm
0.6±0.05
A
0.2
0.07 M A ^±0.05
0.1±0.05
0.48+-00..0023
fSC
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.6 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Symbol
Test Condition
V_R
I_R
C_{2 V}
C_{10 V}
C_{2 V}/C_{10 V}
r_s
I_R = 1 μA
V_R = 15 V
V_R = 2 V, f = 1 MHz
V_R = 10 V, f = 1 MHz
⎯
V_R = 5 V, f = 470 MHz
Min Typ. Max Unit
15
⎯
⎯
V
⎯
⎯
3
nA
14
⎯
16
pF
5.5
⎯
6.5
pF
2.0 2.5
⎯
⎯
⎯
0.2 0.4
Ω
Marking
Equivalent Circuit (top view)
1
2009-06-02