JDV2S36E Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Useful for small size tuner.

TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S36E
JDV2S36E
TCXO/VCO
• High capacitance ratio: C_1V / C_6V = 7.5 (typ.)
• Low series resistance: r_s = 0.4 Ω (typ.)
• Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
V_R
10
V
T_j
125
°C
T_stg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
V_R
I_R
C_1V
C_6V
C_1V / C_6V
r_s
I_R = 1 μA
V_R = 10 V
V_R = 1 V, f = 1 MHz
V_R = 6 V, f = 1 MHz
⎯
V_R = 4 V, f = 100 MHz
Note: Signal level when capacitance is measured: Vsig = 500 mVfms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 1.4 mg (typ.)
Min Typ. Max Unit
10
⎯
⎯
V
⎯
⎯
3
nA
44
⎯ 49.5 pF
5.4
⎯
7.3
pF
6.3 7.5
⎯
⎯
⎯
0.4 0.8
Ω
1
2009-07-17