JDV2S28FS Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon Epitaxial Planar Type

TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S28FS
VCO for UHF Band Radio
• High capacitance ratio: C_1V/C_3V = 2.15 (typ.)
• Low series resistance: r_s = 0.39 Ω (typ.)
• This device is suitable for use in small tuners.
JDV2S28FS
Unit: mm
0.6±0.05
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
V_R
10
V
T_j
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
V_R
I_R
C_1V
C_3V
C_1V/C_3V
r_s
I_R = 1 μA
V_R = 5 V
V_R = 1 V, f = 1 MHz
V_R = 3 V, f = 1 MHz
⎯
V_R = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured. V_sig = 100mVrms
Marking
0.2
0.07 M A ^±0.05
0.1±0.05
0.48+-00..0023
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
Min Typ. Max Unit
10
⎯
⎯
V
⎯
⎯
1
nA
10.2 ⎯ 10.83
pF
4.66 ⎯ 5.05
2.08 ⎯ 2.22 ⎯
⎯ 0.39 0.51 Ω
1
2007-11-01