JDV2S17S Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VCO for UHF Band Radio

TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S17S
VCO for UHF Band Radio
• High Capacitance Ratio: C1V/C4V = 2.1 (typ.)
• Low Series Resistance : rs = 0.6 Ω (typ.)
• This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
V_R
T_j
T_stg
Rating
Unit
10
V
150
°C
−55~150
°C
JDV2S17S
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
V_R
I_R
C1_V
C4_V
C1_V/C4_V
r_s
I_R = 1 µA
V_R = 10 V
V_R = 1 V, f = 1 MHz
V_R = 4 V, f = 1 MHz
⎯
V_R = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured: V_sig = 100 mVrms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011 g (typ.)
Min Typ. Max Unit
10
⎯
⎯
V
⎯
⎯
3
nA
1.77 ⎯ 2.01
pF
0.8
⎯
1.0
2
⎯
2.2
⎯
⎯
0.6 0.75
Ω
Ｊ
1
2004-02-09