JDV2S10T Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VCO for UHF Band Radio

TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S10T
VCO for UHF Band Radio
· High capacitance ratio: C0.5 V/C2.5 V = 2.5 (typ.)
· Low series resistance: rs = 0.35 Ω (typ.)
· Useful for small size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
V_R
T_j
T_stg
Rating
Unit
10
V
125
°C
-55~125
°C
JDV2S10T
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
V_R
I_R = 1 mA
I_R
V_R = 10 V
C_{0.5 V}
V_R = 0.5 V, f = 1 MHz
C_{2.5 V}
V_R = 2.5 V, f = 1 MHz
C_{0.5 V}/C_{2.5 V}
¾
r_s
V_R = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1H1A
Weight: 0.0013 g (typ.)
Min Typ. Max Unit
10
¾
¾
V
¾
¾
3
nA
7.3
¾
8.4
pF
2.75 ¾
3.4
pF
2.4
2.5
¾
¾
¾ 0.35 0.5
W
1
2003-03-24