JDV2S09FS Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VCO for UHF band

VCO for UHF band
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S09FS
• High capacitance ratio: C1V/C4V = 2.1 (typ.)
• Low series resistance: rs = 0.33 Ω (typ.)
• This device is suitable for use in a small-size tuner.
JDV2S09FS
Unit: mm
0.6±0.05
A
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
V_R
T_j
T_stg
Rating
Unit
10
V
150
°C
−55~150
°C
0.2
0.07 M A ^±0.05
0.1±0.05
0.48+-00..0023
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
V_R
I_R
C_1V
C_4V
C_1V/C_4V
r_s
I_R = 1 µA
V_R = 10 V
V_R = 1 V, f = 1 MHz
V_R = 4 V, f = 1 MHz
⎯
V_R = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured. V_sig = 500 mVrms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
Min Typ. Max Unit
10
⎯
⎯
V
⎯
⎯
3
nA
9.7
⎯ 11.1
pF
4.45 ⎯ 5.45
1.8 2.1
⎯
⎯
⎯ 0.33 0.45 Ω
B
1
2004-02-09